MMFTN138 MMFTN138 n n-channel logic level enhancement mode field effect transistor n-kanal logikpegel feldeffekt-transistor - anreicherungstyp n version 2011-01-24 dimensions - ma?e [mm] 1 = g 2 = s 3 = d power dissipation C verlustleistung 360 mw plastic case kunststoffgeh?use sot-23 (to-236) weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) MMFTN138 drain-source-voltage C drain-source-spannung v dss 50 v drain-gate-voltage (r gs < 20 k ) drain-gate-spannung v dgr 50 v gate-source-voltage gate-source-spannung dc t p < 50 s v gss v gss 20 v 4 0 v power dissipation C verlustleistung p tot 360 mw drain current continuos C drainstrom (dc) i d 220 ma peak drain current C drain-spitzenstrom i dm 880 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s 150c -55+150c ? diotec semiconductor ag http://www.diotec.com/ 1 2 . 5 m a x 1 . 3 0 . 1 1.1 0.4 2.9 0.1 1 2 3 type code 1.9
MMFTN138 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. drain-source breakdown voltage C drain-source-durchbruchspannung i d = 250 a v (br)dss 50 v drain-source leakage current C drain-source-leckstrom v ds = 50 v v ds = 30 v i dss 500 na 100 na gate-source leakage current C gate-source-leckstrom v gs = 2 0 v i gss 10 0 na gate-source threshold voltage C gate-source schwellspannung v gs = v ds , i d = 1 ma v gs(th) 0.8 v 1.6 v drain-source on-state resistance C drain-source einschaltwiderstand v gs = 10 v , i d = 220 ma v gs = 4.5 v, i d = 220 ma r ds(on) 3.5 6 forward transconductance C bertragungssteilheit v ds = 10 v, i d = 220 ma g fs 0.12 s input capacitance C eingangskapazit?t v ds = 25 v, f = 1 mhz c iss 60 pf output capacitance C ausgangskapazit?t v ds = 25 v, f = 1 mhz c oss 25 pf reverse transfer capacitance C rckwirkungskapazit?t v ds = 25 v, f = 1 mhz c rss 10 pf turn-on delay time C einschaltverz?gerung v dd = 30 v, i d = 290 ma, v gs = 10 v, r g = 50 t d(on) 8 ns turn-on rise time C anstiegszeit v dd = 30 v, i d = 290 ma, v gs = 10 v, r g = 50 t r 12 ns turn-off delay time C ausschaltverz?gerung v dd = 30 v, i d = 290 ma, v gs = 10 v, r g = 50 t d(off) 16 ns turn-off fall time C abfallzeit v dd = 30 v, i d = 290 ma, v gs = 10 v, r g = 50 t f 22 ns thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 350 k/w drain-source diode maximum ratings and characteristics (t j = 25c) grenz- und kennwerte (t j = 25c) min. typ. max. maximum continuos source current i s 220 ma maximum pulse source current i sm 880 ma drain-source diode forward voltage i s = 440 ma v gd 1.4 v 2 http://www.diotec.com/ ? diotec semiconductor ag
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